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  1996. 1. 28 1/3 semiconductor technical data kn4400/4401 epitaxial planar npn transistor revision no : 0 general purpose application. switching application.  complementary to kn4402/4403. maximum rating (ta=25 1 ) to-92 dim millimeters a b c d f g h j k l 4.70 max 4.80 max 3.70 max 0.45 1.00 1.27 0.85 0.45 14.00 0.50 0.55 max 2.30 d 1 2 3 b a j k g h f f l e c e c m n 0.45 max m 1.00 n 1. emitter 3. collector 2. base + _ characteristic symbol rating unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 40 v emitter-base voltage v ebo 6 v collector current i c 600 ma collector power dissipation p c 625 mw junction temperature t j 150 1 storage temperature range t stg -55  150 1
1996. 1. 28 2/3 revision no : 0 electrical characteristics (ta=25 1 ) kn4400/4401 * pulse test : pulse width # 300  s, duty cycle # 2%. characteristic symbol test condition min. typ. max. unit collector cut-off current i cex v ce =35v, v eb(off) =0.4v - - 100 na collector cut-off current i cbo v cb =60v, i e =0 - - 100 na emitter cut-off current i ebo v eb =6v, i c =0 - - 100 na collector-base breakdown voltage v (br)cbo i c =100  a, i e =0 60 - - v collector-emitter breakdown voltage * v (br)ceo i e =1ma, i b =0 40 - - v emitter-base breakdown voltage v (br)ebo i e =100  a, i c =0 6 - - v dc current gain * KN4401 h fe (1) v ce =1v, i c =0.1ma 20 - - kn4400 h fe (1) v ce =1v, i c =1ma 20 - - KN4401 h fe (2) 40 - - kn4400 h fe (2) v ce =1v, i c =10ma 40 - - KN4401 h fe (3) 80 - - kn4400 h fe (3) v ce =1v, i c =150ma 50 - 150 KN4401 h fe (4) 100 - 300 kn4400 h fe (4) v ce =2v, i c =500ma 20 - - KN4401 h fe (5) 40 - - collector-emitter saturation voltage * v ce(sat) 1 i c =150ma, v ce =15ma - - 0.4 v v ce(sat) 2 i c =500ma, i b =50ma - - 0.75 base-emitter saturation voltage * v be(sat) 1 i c =150ma, i b =15ma 0.75 - 0.95 v v be(sat) 2 i c =500ma, i b =50ma - - 1.2 transition frequency kn4400 f t i c =20ma, v ce =10v, f=100mhz 200 - - mhz KN4401 250 - - collector output capacitance c ob v cb =5v, i e =0, f=1.0mhz - - 6.5 pf
1996. 1. 28 3/3 kn4400/4401 revision no : 0 20 capacitance c , c (pf) 1 cb 30 10 3 1 collector-base voltage v (v) cb c , c - v h - i c collector current i (ma) 1 3 10 30 1k fe dc current gain h 10 collector current i (ma) saturation voltage 3 1 be(sat) 30 10 c v , v - i fe c 300 1k 30 50 100 300 500 100 v =2v ce ce v =1v be(sat) ce(sat) c v ,v (v) ce(sat) 100 300 1k 0.01 0.03 0.05 0.1 0.3 0.5 1 3 5 10 v be(sat) ce(sat) v cb ob cb ob 100 300 3 5 10 c f=1mhz ob c f=100khz cb i /i =10 c b collector power dissipation 0 c 0 ambient temperature ta ( c) pc - ta p (mw) 25 50 75 100 125 150 175 100 200 300 400 500 600 700


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